@InProceedings{CorreaUeMaMiBaFe:2009:ImElRe,
               author = "Correa, W. L. A. and Ueda, M{\'a}rio and Matsushima, J. T. and 
                         Miranda, C. R. B. and Baldan, Maur{\'{\i}}cio Ribeiro and 
                         Ferreira, Neidenei Gomes",
          affiliation = "{Universidade S{\~a}o Francisco} and {Instituto Nacional de 
                         Pesquisas Espaciais (INPE)} and {Instituto Nacional de Pesquisas 
                         Espaciais (INPE)} and {Instituto Nacional de Pesquisas Espaciais 
                         (INPE)} and {Instituto Nacional de Pesquisas Espaciais (INPE)} and 
                         {Instituto Nacional de Pesquisas Espaciais (INPE)}",
                title = "Improvement of Electrochemical Response of Diamond Film with 
                         Sulfur Addition by Nitrogen Plasma Immersion Ion Implantation",
                 year = "2009",
         organization = "International Workshop on Plasma-Based Ion Implantation and 
                         Deposition, 10. (PPI\&D).",
             abstract = "The purpose of this work was to investigate the effects of 
                         nitrogen plasma immersion ion implantation on diamond film with 
                         sulfur addition. The diamond film was grown on Si substrate by hot 
                         filament chemical vapor deposition (HFCVD). It was examined how 
                         added sulfur influences the diamond growth rate, morphology, 
                         growth orientation and the crystal quality as well as the 
                         improvement of electrochemical response by nitrogen plasma ion 
                         implantation. The morphology and structure of the film were 
                         studied by scanning electron microscopy (SEM) and visible Raman 
                         spectroscopy techniques, respectively. Plasma immersion ion 
                         implantation technique showed good nitrogen implanted profile. For 
                         nitrogen implantation, a DC glow discharge plasma of 1x1010 cm-3 
                         density were produced in a 1 mTorr nitrogen gas pressures and a 
                         high voltage pulses of 12 kV amplitude, 50 {\`{\i}}s duration 
                         and 300 Hz repetition frequency. The characterization of the 
                         working potential window and capacitive currents were obtained by 
                         cyclic voltammetry measurements. The results showed that 
                         electrochemical response of the diamond films were improved by 
                         nitrogen plasma ion implantation, however the film morphology is 
                         crucial to analyze the results from cyclic voltammograms.",
  conference-location = "S{\~a}o Jos{\'e} dos Campos, SP",
      conference-year = "7-11 Sept.",
        urlaccessdate = "03 maio 2024"
}